Vishay TrenchFET Type N-Channel MOSFET, 64 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA18BDP-T1-GE3

N

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  • 2026年7月20日 發貨
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RS庫存編號:
735-114
製造零件編號:
SiRA18BDP-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00702Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

36W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Length

6.25mm

Height

1.1mm

Width

5.3mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.

Offers 100 percent Rg and UIS testing for proven device reliability

Supports high power density dc/dc converter applications

Enables efficient synchronous rectification performance

Complies with RoHS standards and halogen free requirements

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