製造零件編號

Vishay TrenchFET P-Channel MOSFET, -136.7 A, -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3

RS庫存編號:: 735-202
製造零件編號:: SIR5207DP-T1-UE3
製造商:: Vishay

Vishay TrenchFET P-Channel MOSFET, -136.7 A, -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3

可享批量折扣

小計（1 件）*

TWD30.00

(不含稅)

TWD31.50

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月21日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 - 24	TWD30.00
25 - 99	TWD20.00
100 +	TWD10.00

* 參考價格

RS庫存編號:: 735-202
製造零件編號:: SIR5207DP-T1-UE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	P-Channel
	Maximum Continuous Drain Current Id	-136.7A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	PowerPAK SO-8
	Series	TrenchFET
	Mount Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0042Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	65.7W
	Maximum Gate Source Voltage Vgs	±12 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	139nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS Compliant
	Width	5.26 mm
	Length	6.25mm
	Height	1.12mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type P-Channel
	Maximum Continuous Drain Current Id -136.7A
	Maximum Drain Source Voltage Vds -20V
	Package Type PowerPAK SO-8
	Series TrenchFET
	Mount Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0042Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 65.7W
	Maximum Gate Source Voltage Vgs ±12 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 139nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS Compliant
	Width 5.26 mm
	Length 6.25mm
	Height 1.12mm
	Automotive Standard No

Datasheet - SIR5207DP-T1-UE3

COO (Country of Origin):: CN

Vishay TrenchFET P-Channel MOSFET, -136.7 A, -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3

訂單超過 $1,300.00 免費送貨

相關連結