Vishay TrenchFET N channel-Channel MOSFET, 201.5 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3

N

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

TWD62.00

(不含稅)

TWD65.10

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
1 - 9TWD62.00
10 - 24TWD40.00
25 - 99TWD21.00
100 +TWD20.00

* 參考價格

RS庫存編號:
735-264
製造零件編號:
SIR5402DP-T1-UE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

201.5A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0017Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

92.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

82nC

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.

Provides 100% Rg and UIS testing for proven reliability

Ensures RoHS compliance for environmental safety

Delivers halogen-free construction for eco-friendly design

Supports synchronous rectification for efficient power conversion

Enables motor drive control with dependable switching performance

相關連結