Vishay TrenchFET N channel-Channel MOSFET, 201.5 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3

N

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  • 2026年11月11日 發貨
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RS庫存編號:
735-264
製造零件編號:
SIR5402DP-T1-UE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

201.5A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0017Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

92.5W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

82nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Height

1.12mm

Length

6.25mm

Width

5.26 mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.

Provides 100% Rg and UIS testing for proven reliability

Ensures RoHS compliance for environmental safety

Delivers halogen-free construction for eco-friendly design

Supports synchronous rectification for efficient power conversion

Enables motor drive control with dependable switching performance

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