STMicroelectronics SCT10N120H N-Channel SiC Power Module, 12 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCT10N120H
- RS庫存編號:
- 204-3950
- 製造零件編號:
- SCT10N120H
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 204-3950
- 製造零件編號:
- SCT10N120H
- 製造商:
- STMicroelectronics
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Series | SCT10N120H | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current (Id) | 12 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | Hip-247 | |
| Maximum Drain Source Resistance (Rds) | 0.52 Ω | |
| Mount Type | Through Hole | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Series SCT10N120H | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current (Id) 12 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type Hip-247 | ||
Maximum Drain Source Resistance (Rds) 0.52 Ω | ||
Mount Type Through Hole | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200°C)
Very fast and robust intrinsic body diode
Low capacitance
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