onsemi NVH Type N-Channel MOSFET, 17 A, 1200 V Enhancement, 4-Pin TO-247 NVHL160N120SC1
- RS庫存編號:
- 202-5747
- 製造零件編號:
- NVHL160N120SC1
- 製造商:
- onsemi
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- RS庫存編號:
- 202-5747
- 製造零件編號:
- NVHL160N120SC1
- 製造商:
- onsemi
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 119W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Height | 20.25mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 119W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Height 20.25mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 160 mΩ, TO247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% UIL Tested
Low effective output capacitance
RoHS compliant
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