onsemi NVH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247
- RS庫存編號:
- 202-5739
- 製造零件編號:
- NVH4L080N120SC1
- 製造商:
- onsemi
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- RS庫存編號:
- 202-5739
- 製造零件編號:
- NVH4L080N120SC1
- 製造商:
- onsemi
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Standards/Approvals | RoHS | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Standards/Approvals RoHS | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
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