onsemi NTB Type N-Channel MOSFET, 201 A, 100 V Enhancement, 3-Pin TO-263 NTB004N10G
- RS庫存編號:
- 202-5688
- 製造零件編號:
- NTB004N10G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD804.00
(不含稅)
TWD844.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,245 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD160.80 | TWD804.00 |
| 200 - 395 | TWD156.80 | TWD784.00 |
| 400 + | TWD154.40 | TWD772.00 |
* 參考價格
- RS庫存編號:
- 202-5688
- 製造零件編號:
- NTB004N10G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.82mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 340W | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.88mm | |
| Standards/Approvals | Pb-Free and are RoHS | |
| Length | 10.63mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.82mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 340W | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.88mm | ||
Standards/Approvals Pb-Free and are RoHS | ||
Length 10.63mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
The ON Semiconductor Power MOSFET runs with 201 Ampere and 100 Volts. It can be used in Hot Swap in 48 V systems.
Low drain to source on resistance
High current capability
Wide safe operating area
Pb free
Halogen free
RoHS compliant
相關連結
- onsemi NTB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG080N120SC1
- onsemi NTB Type N-Channel MOSFET 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S