STMicroelectronics Single 1 N-Channel MOSFET, 72 A, 600 V Enhancement, 3-Pin TO-247 STWA75N60DM6
- RS庫存編號:
- 195-2678
- 製造零件編號:
- STWA75N60DM6
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 195-2678
- 製造零件編號:
- STWA75N60DM6
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 72 A | |
| Maximum Drain Source Voltage (Vds) | 600 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Forward Voltage (Vf) | 1.6 V | |
| Height | 21.1 mm | |
| Length | 15.9 mm | |
| Maximum Drain Source Resistance (Rds) | 36 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 25 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 446 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Width | 5.1 mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 72 A | ||
Maximum Drain Source Voltage (Vds) 600 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Forward Voltage (Vf) 1.6 V | ||
Height 21.1 mm | ||
Length 15.9 mm | ||
Maximum Drain Source Resistance (Rds) 36 mΩ | ||
Maximum Gate Source Voltage (Vgs) 25 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 446 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Width 5.1 mm | ||
- COO (Country of Origin):
- CN
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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