STMicroelectronics FDmesh Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 168-7473
- 製造零件編號:
- STW34NM60ND
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD6,015.00
(不含稅)
TWD6,315.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 420 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD200.50 | TWD6,015.00 |
| 60 - 90 | TWD196.20 | TWD5,886.00 |
| 120 + | TWD191.80 | TWD5,754.00 |
* 參考價格
- RS庫存編號:
- 168-7473
- 製造零件編號:
- STW34NM60ND
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | FDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 190W | |
| Typical Gate Charge Qg @ Vgs | 80.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series FDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 190W | ||
Typical Gate Charge Qg @ Vgs 80.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 20.15mm | ||
Length 15.75mm | ||
Automotive Standard No | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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