onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK NVMYS011N04CTWG
- RS庫存編號:
- 195-2548
- 製造零件編號:
- NVMYS011N04CTWG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD910.00
(不含稅)
TWD955.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD18.20 | TWD910.00 |
| 750 - 1450 | TWD17.80 | TWD890.00 |
| 1500 + | TWD17.50 | TWD875.00 |
* 參考價格
- RS庫存編號:
- 195-2548
- 製造零件編號:
- NVMYS011N04CTWG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMYS011N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMYS011N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.25 mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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