onsemi NTMYS8D0N04C Type N-Channel MOSFET, 49 A, 40 V Enhancement, 4-Pin LFPAK
- RS庫存編號:
- 195-2526
- 製造零件編號:
- NTMYS8D0N04CTWG
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD57,600.00
(不含稅)
TWD60,480.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月01日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD19.20 | TWD57,600.00 |
| 15000 + | TWD18.80 | TWD56,400.00 |
* 參考價格
- RS庫存編號:
- 195-2526
- 製造零件編號:
- NTMYS8D0N04CTWG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS8D0N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS8D0N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
相關連結
- onsemi NTMYS8D0N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NTMYS8D0N04CTWG
- onsemi NVMYS8D0N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS8D0N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NVMYS8D0N04CTWG
- onsemi NVMJS1D3N04C Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NTMYS5D3N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS011N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS1D3N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
