onsemi NVMYS8D0N04C Type N-Channel MOSFET, 49 A, 40 V Enhancement, 4-Pin LFPAK

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 3000 件)*

TWD42,300.00

(不含稅)

TWD44,400.00

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
每卷*
3000 - 3000TWD14.10TWD42,300.00
6000 +TWD13.80TWD41,400.00

* 參考價格

RS庫存編號:
195-2540
製造零件編號:
NVMYS8D0N04CTWG
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

NVMYS8D0N04C

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

8.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

38W

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

5mm

Height

1.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

相關連結