onsemi NVMYS7D3N04CL Type N-Channel MOSFET, 52 A, 40 V Enhancement, 4-Pin LFPAK
- RS庫存編號:
- 195-2536
- 製造零件編號:
- NVMYS7D3N04CLTWG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD38,700.00
(不含稅)
TWD40,620.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD12.90 | TWD38,700.00 |
| 6000 + | TWD12.60 | TWD37,800.00 |
* 參考價格
- RS庫存編號:
- 195-2536
- 製造零件編號:
- NVMYS7D3N04CLTWG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NVMYS7D3N04CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 38W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NVMYS7D3N04CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 38W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
相關連結
- onsemi NVMYS7D3N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NVMYS7D3N04CLTWG
- onsemi NTMYS7D3N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS7D3N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NTMYS7D3N04CLTWG
- onsemi NVMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS014N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS011N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK