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選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	235A
	Maximum Drain Source Voltage Vds	40V
	Package Type	LFPAK
	Series	NVMJS1D3N04C
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	128W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Operating Temperature	175°C
	Width	4.9 mm
	Height	1.2mm
	Length	5mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 235A
	Maximum Drain Source Voltage Vds 40V
	Package Type LFPAK
	Series NVMJS1D3N04C
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 128W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Operating Temperature 175°C
	Width 4.9 mm
	Height 1.2mm
	Length 5mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMJS1D3N04CTWG

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COO (Country of Origin):: PH

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK8 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free, Halogen Free/BFR Free

onsemi NVMJS1D3N04C Type N-Channel MOSFET, 235 A, 40 V Enhancement, 8-Pin LFPAK

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