STMicroelectronics Single Mdmesh M6 1 N-Channel, 13 A, 600 V Enhancement, 3-Pin TO-220FP STF18N60M6
- RS庫存編號:
- 192-4652
- 製造零件編號:
- STF18N60M6
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 192-4652
- 製造零件編號:
- STF18N60M6
- 製造商:
- STMicroelectronics
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Transistor Configuration | Single | |
| Series | Mdmesh M6 | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 13 A | |
| Maximum Drain Source Voltage (Vds) | 600 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220FP | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.6 V | |
| Height | 16.4 mm | |
| Length | 10.4 mm | |
| Maximum Drain Source Resistance (Rds) | 280 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 25 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 25 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 16.8 nC | |
| Width | 4.6 mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Transistor Configuration Single | ||
Series Mdmesh M6 | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 13 A | ||
Maximum Drain Source Voltage (Vds) 600 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220FP | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.6 V | ||
Height 16.4 mm | ||
Length 10.4 mm | ||
Maximum Drain Source Resistance (Rds) 280 mΩ | ||
Maximum Gate Source Voltage (Vgs) 25 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 25 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 16.8 nC | ||
Width 4.6 mm | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
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