STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-220FP
- RS庫存編號:
- 151-411
- Distrelec 貨號:
- 304-29-903
- 製造零件編號:
- STP12NM50FP
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 包，共 5 件）*
TWD442.00
(不含稅)
TWD464.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 930 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 + | TWD88.40 | TWD442.00 |
* 參考價格
- RS庫存編號:
- 151-411
- Distrelec 貨號:
- 304-29-903
- 製造零件編號:
- STP12NM50FP
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | MDmesh | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Height | 30.6mm | |
| Length | 15.85mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series MDmesh | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Height 30.6mm | ||
Length 15.85mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET, This device developed using MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
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