STMicroelectronics MDmesh M5 Type N-Channel MDmesh V Power MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-220FP STF16N65M5
- RS庫存編號:
- 687-5291
- 製造零件編號:
- STF16N65M5
- 製造商:
- STMicroelectronics
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小計（1 包，共 2 件）*
TWD164.00
(不含稅)
TWD172.20
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD82.00 | TWD164.00 |
| 14 - 24 | TWD80.50 | TWD161.00 |
| 26 + | TWD78.50 | TWD157.00 |
* 參考價格
- RS庫存編號:
- 687-5291
- 製造零件編號:
- STF16N65M5
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MDmesh V Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220FP | |
| Series | MDmesh M5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.299Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 9.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MDmesh V Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220FP | ||
Series MDmesh M5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.299Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 9.3mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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