Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 3-Pin TO-247 C3M0075120D
- RS庫存編號:
- 192-3376
- 製造零件編號:
- C3M0075120D
- 製造商:
- Wolfspeed
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD12,267.00
(不含稅)
TWD12,880.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 120 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD408.90 | TWD12,267.00 |
| 60 - 90 | TWD396.60 | TWD11,898.00 |
| 120 + | TWD388.70 | TWD11,661.00 |
* 參考價格
- RS庫存編號:
- 192-3376
- 製造零件編號:
- C3M0075120D
- 製造商:
- Wolfspeed
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | C3M | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 113.6W | |
| Forward Voltage Vf | 4.5V | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series C3M | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 113.6W | ||
Forward Voltage Vf 4.5V | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.
Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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