Wolfspeed C3M N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247
- RS庫存編號:
- 168-4886
- 製造零件編號:
- C3M0065100K
- 製造商:
- Wolfspeed
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享受批量購買折扣
額外添加150件可節省TWD3,960.00
查看批量定價選項小計（1 管，共 30 件）*
TWD19,818.00
(不含稅)
TWD20,808.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 630 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* | 節省 |
|---|---|---|---|
| 30 - 120 | TWD660.60 | TWD19,818.00 | - |
| 150 + | TWD634.20 | TWD19,026.00 | TWD3,960.00 |
* 參考價格
- RS庫存編號:
- 168-4886
- 製造零件編號:
- C3M0065100K
- 製造商:
- Wolfspeed
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | C3M | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 113.5W | |
| Maximum Gate Source Voltage Vgs | -8V, +19V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Height | 23.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series C3M | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 113.5W | ||
Maximum Gate Source Voltage Vgs -8V, +19V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Height 23.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
MOSFET Transistors, Cree Inc.
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