onsemi NTHL Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

RS庫存編號:: 189-0256
製造零件編號:: NTHL190N65S3HF
製造商:: onsemi

onsemi NTHL Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

TWD3,846.00

(不含稅)

TWD4,038.30

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月11日發貨

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單位	每單位	每管*
30 - 30	TWD128.20	TWD3,846.00
60 - 90	TWD125.40	TWD3,762.00
120 +	TWD122.70	TWD3,681.00

* 參考價格

RS庫存編號:: 189-0256
製造零件編號:: NTHL190N65S3HF
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTHL
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	162W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Width	4.82 mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTHL
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 162W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Width 4.82 mm
	Automotive Standard No

Datasheet NTHL190N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 35 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 161 mΩ

Benefits

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

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