Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 60 A, 25 V Enhancement, 8-Pin PowerPAK 1212
- RS庫存編號:
- 188-4999
- 製造零件編號:
- SISF02DN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
小計（1 包，共 5 件）*
TWD259.00
(不含稅)
TWD271.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月27日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD51.80 | TWD259.00 |
| 750 - 1495 | TWD50.60 | TWD253.00 |
| 1500 + | TWD49.80 | TWD249.00 |
* 參考價格
- RS庫存編號:
- 188-4999
- 製造零件編號:
- SISF02DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 69.4W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Common Drain | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 69.4W | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Common Drain | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
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