Vishay TrenchFET Gen IV N channel-Channel MOSFET, 361 A, 80 V N, 8-Pin PowerPAK 10 x 12 SIJK4810-T1-GE3

N

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小計(1 組,共 50 件)*

TWD150.00

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TWD157.50

(含稅)

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每單位
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50 - 450TWD3.00TWD150.00
500 - 2450TWD1.90TWD95.00
2500 - 4950TWD1.50TWD75.00
5000 +TWD1.40TWD70.00

* 參考價格

RS庫存編號:
790-429
製造零件編號:
SIJK4810-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

361A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 10 x 12

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0018Ω

Channel Mode

N

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Maximum Power Dissipation Pd

446W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

10mm

Length

12mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N Channel MOSFET is designed for efficient power management in various applications, featuring an Advanced TrenchFET Gen IV technology that reduces conduction losses and improves overall performance.

Operates with a drain-source voltage of up to 80 V

Provides a low on-state resistance of 0.0018 Ω at 10 V gate-source voltage

Rated for continuous drain current of 361 A

Features Kelvin source connection to minimise gate noise

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