Vishay TrenchFET Gen IV N channel-Channel MOSFET, 361 A, 80 V N, 8-Pin PowerPAK 10 x 12 SIJK4810-T1-GE3
- RS庫存編號:
- 790-429
- 製造零件編號:
- SIJK4810-T1-GE3
- 製造商:
- Vishay
N
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可享批量折扣
查看批量定價選項小計（1 組，共 50 件）*
TWD16,995.00
(不含稅)
TWD17,845.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年8月16日 發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 50 - 450 | TWD339.90 | TWD16,995.00 |
| 500 - 2450 | TWD210.20 | TWD10,510.00 |
| 2500 - 4950 | TWD163.20 | TWD8,160.00 |
| 5000 + | TWD156.50 | TWD7,825.00 |
* 參考價格
- RS庫存編號:
- 790-429
- 製造零件編號:
- SIJK4810-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 361A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0018Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 12mm | |
| Width | 10mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 361A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 10 x 12 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0018Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 12mm | ||
Width 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N Channel MOSFET is designed for efficient power management in various applications, featuring an Advanced TrenchFET Gen IV technology that reduces conduction losses and improves overall performance.
Operates with a drain-source voltage of up to 80 V
Provides a low on-state resistance of 0.0018 Ω at 10 V gate-source voltage
Rated for continuous drain current of 361 A
Features Kelvin source connection to minimise gate noise
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