Vishay TrenchFET Gen IV N channel-Channel MOSFET, 461 A, 60 V N, 8-Pin PowerPAK 10 x 12 SIJK4610-T1-GE3

N

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TWD150.00

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TWD157.50

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50 - 450TWD3.00TWD150.00
500 - 2450TWD1.90TWD95.00
2500 - 4950TWD1.50TWD75.00
5000 +TWD1.40TWD70.00

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RS庫存編號:
790-428
製造零件編號:
SIJK4610-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

461A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 10 x 12

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0012Ω

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

160nC

Maximum Power Dissipation Pd

446W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

10mm

Length

12mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N Channel MOSFET delivers superior performance for various applications. With a robust design, it minimises power loss and offers exceptional conduction efficiency, making it Ideal for power management systems.

Operating voltage rating of 60 V enhances system reliability

Features low on-state resistance for reduced power dissipation

Kelvin connection significantly lowers gate noise interference

Robust continuous drain current capability of 77 A ensures optimal performance

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