Vishay SiSHA14DN N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSHA14DN-T1-GE3
- RS庫存編號:
- 188-4957
- 製造零件編號:
- SiSHA14DN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
TWD660.00
(不含稅)
TWD693.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 5,625 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | TWD26.40 | TWD660.00 |
| 750 - 1475 | TWD25.80 | TWD645.00 |
| 1500 + | TWD25.40 | TWD635.00 |
* 參考價格
- RS庫存編號:
- 188-4957
- 製造零件編號:
- SiSHA14DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSHA14DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26.5W | |
| Maximum Gate Source Voltage Vgs | -16V, +20V | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 930μm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiSHA14DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26.5W | ||
Maximum Gate Source Voltage Vgs -16V, +20V | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 930μm | ||
Width 3.3mm | ||
Automotive Standard No | ||
N-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
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