onsemi FDWS Type N-Channel MOSFET, 80 A, 100 V Enhancement, 8-Pin DFN FDWS86068-F085
- RS庫存編號:
- 185-9082
- 製造零件編號:
- FDWS86068-F085
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 4 件）*
TWD466.00
(不含稅)
TWD489.28
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,984 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 4 - 748 | TWD116.50 | TWD466.00 |
| 752 - 1496 | TWD113.80 | TWD455.20 |
| 1500 + | TWD112.00 | TWD448.00 |
* 參考價格
- RS庫存編號:
- 185-9082
- 製造零件編號:
- FDWS86068-F085
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN | |
| Series | FDWS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Width | 6.3 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN | ||
Series FDWS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Height 1.05mm | ||
Width 6.3 mm | ||
Automotive Standard AEC-Q101 | ||
不相容
- COO (Country of Origin):
- PH
N-Channel PowerTrench® MOSFET 100V, 80A, 4.5mΩ
Typical RDS(on) = 5.2 mΩ at VGS = 10 V, ID = 80 A
Typical Qg(tot) = 31 nC at VGS = 10 V, ID = 80 A
UIS Capability
These Devices are Pb−Free
Wettable Flanks for Automatic Optical Inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
相關連結
- onsemi FDWS Type N-Channel MOSFET 100 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN NVMTS1D2N08H
- onsemi NVMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6D1N08H Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN