onsemi Type N-Channel MOSFET, 337 A, 80 V Enhancement, 8-Pin DFN NVMTS1D2N08H
- RS庫存編號:
- 195-2677
- 製造零件編號:
- NVMTS1D2N08H
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD1,089.00
(不含稅)
TWD1,143.45
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD217.80 | TWD1,089.00 |
| 750 - 1495 | TWD212.80 | TWD1,064.00 |
| 1500 + | TWD209.40 | TWD1,047.00 |
* 參考價格
- RS庫存編號:
- 195-2677
- 製造零件編號:
- NVMTS1D2N08H
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 337A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 147nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 337A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 147nC | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
相關連結
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi NTMFS0D8N Type N-Channel MOSFET 30 V Enhancement, 8-Pin DFN
- onsemi NTMFS0D8N Type N-Channel MOSFET 30 V Enhancement, 8-Pin DFN NTMFS0D8N03CT1G
- onsemi NTMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H824N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN