onsemi NVMFS6H824N Type N-Channel MOSFET, 103 A, 80 V Enhancement, 5-Pin DFN
- RS庫存編號:
- 185-8155
- 製造零件編號:
- NVMFS6H824NT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1500 件）*
TWD39,450.00
(不含稅)
TWD41,430.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,500 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 1500 | TWD26.30 | TWD39,450.00 |
| 3000 + | TWD25.70 | TWD38,550.00 |
* 參考價格
- RS庫存編號:
- 185-8155
- 製造零件編號:
- NVMFS6H824NT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 103A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFS6H824N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Width | 6.1 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 103A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFS6H824N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Width 6.1 mm | ||
Automotive Standard AEC-Q101 | ||
不相容
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H818NWF − Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Automotive Qualified
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
Load Switch
DC/DC converter
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