onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181
- RS庫存編號:
- 181-1895
- 製造零件編號:
- FDMS86181
- 製造商:
- onsemi
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TWD496.00
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TWD520.80
(含稅)
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- 1,990 件從 2026年6月22日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD99.20 | TWD496.00 |
| 750 - 1495 | TWD97.00 | TWD485.00 |
| 1500 + | TWD95.60 | TWD478.00 |
* 參考價格
- RS庫存編號:
- 181-1895
- 製造零件編號:
- FDMS86181
- 製造商:
- onsemi
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | FDMS86181 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.85mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series FDMS86181 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.85mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.
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