onsemi N-Channel MOSFET, 224 A, 60 V Enhancement, 8-Pin PQFN NVMFSC1D6N06CL
- RS庫存編號:
- 195-2675
- 製造零件編號:
- NVMFSC1D6N06CL
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD1,910.00
(不含稅)
TWD2,005.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 710 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD191.00 | TWD1,910.00 |
| 750 - 1490 | TWD186.20 | TWD1,862.00 |
| 1500 + | TWD183.30 | TWD1,833.00 |
* 參考價格
- RS庫存編號:
- 195-2675
- 製造零件編號:
- NVMFSC1D6N06CL
- 製造商:
- onsemi
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 224A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Length | 5.9mm | |
| Height | 950μm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 224A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 5mm | ||
Standards/Approvals No | ||
Length 5.9mm | ||
Height 950μm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
PPAP Capable
Application
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Reverser Battery protection
Switching power supplies
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