onsemi Type N-Channel MOSFET, 224 A, 60 V Enhancement, 8-Pin PQFN
- RS庫存編號:
- 195-2674
- 製造零件編號:
- NVMFSC1D6N06CL
- 製造商:
- onsemi
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- RS庫存編號:
- 195-2674
- 製造零件編號:
- NVMFSC1D6N06CL
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 224A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.9mm | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 224A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Operating Temperature 150°C | ||
Length 5.9mm | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
PPAP Capable
Application
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Reverser Battery protection
Switching power supplies
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