Vishay Single 1 Type N-Channel Power MOSFET, 2.6 A, 200 V, 3-Pin IRFR210PBF
- RS庫存編號:
- 180-8342
- 製造零件編號:
- IRFR210PBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 75 件）*
TWD937.50
(不含稅)
TWD984.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 5,250 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | TWD12.50 | TWD937.50 |
| 150 - 225 | TWD12.10 | TWD907.50 |
| 300 + | TWD11.70 | TWD877.50 |
* 參考價格
- RS庫存編號:
- 180-8342
- 製造零件編號:
- IRFR210PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 6.73 mm | |
| Height | 2.38mm | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 200V | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 6.73 mm | ||
Height 2.38mm | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFR210 is a N-channel power MOSFET having drain to source(Vds) voltage of 200V.The gate to source voltage(VGS) is 20V. It is having DPAK (TO-252) and IPAK (TO-251) package. It offers drain to source resistance (RDS.) 1.5ohms at 10VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
Surface mount
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