Vishay Single 1 N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF

RS庫存編號:: 180-8316
製造零件編號:: IRFBE30LPBF
製造商:: Vishay

Vishay Single 1 N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF

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RS庫存編號:: 180-8316
製造零件編號:: IRFBE30LPBF
製造商:: Vishay

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產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-262
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	78nC
	Forward Voltage Vf	1.8V
	Maximum Power Dissipation Pd	125W
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Number of Elements per Chip	1
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-262
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 78nC
	Forward Voltage Vf 1.8V
	Maximum Power Dissipation Pd 125W
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay Power MOSFET, 800V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRFBE30LPBF

This power MOSFET is an N-channel transistor designed for high-voltage switching and power conversion tasks in industrial electronics. Housed in a TO-262 package, it serves as a single-element power transistor capable of handling elevated drain-source voltages and sustained power dissipation across a wide thermal range, making it suitable for demanding operating conditions where robust voltage endurance is required.

Features and Benefits:

• 800V drain capability enabling high-voltage switching
• 125W power dissipation allowing sustained thermal load
• 4.1A continuous drain current for moderate-load applications
• 3Ω Rds providing predictable on-resistance characteristics
• 78nC gate charge for controlled switching transitions
• 20V Vgs maximum protecting gate integrity

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive circuits requiring high Vds
• Can be used for overload protection and snubber circuits
• Useful in power management where an elevated temperature range matters

What temperature extremes can it withstand during operation?

It operates across a wide thermal span from -55°C up to 150°C, suitable for environments with significant temperature variation.

How is gate protection maintained during use?

The maximum permissible gate-to-source voltage is 20V, defining the threshold for safe gate-drive amplitudes to avoid damage.

What package should be considered for thermal and mounting needs?

The TO-262 package provides a robust mounting format with three pins and supports heat dissipation compatible with the device’s 125W rating.

How many active elements are contained on the chip?

The device comprises a single active element per chip, simplifying circuit topology for single-transistor configurations.