Vishay IRFBE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220 IRFBE30PBF
- RS庫存編號:
- 541-1124
- Distrelec 貨號:
- 171-15-208
- 製造零件編號:
- IRFBE30PBF
- 製造商:
- Vishay
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可享批量折扣
小計（1 件）*
TWD63.00
(不含稅)
TWD66.15
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 149 件準備從其他地點送貨
- 加上 1,534 件從 2026年2月03日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 12 | TWD63.00 |
| 13 - 24 | TWD56.00 |
| 25 + | TWD55.00 |
* 參考價格
- RS庫存編號:
- 541-1124
- Distrelec 貨號:
- 171-15-208
- 製造零件編號:
- IRFBE30PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | IRFBE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series IRFBE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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