Infineon HEXFETPower MOSFET Type N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF
- RS庫存編號:
- 688-6807
- 製造零件編號:
- IRF1324PBF
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD197.00
(不含稅)
TWD206.84
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 加上 354 件從 2026年4月20日 起發貨
- 最終 400 件從 2026年4月27日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD98.50 | TWD197.00 |
| 14 - 24 | TWD96.50 | TWD193.00 |
| 26 + | TWD91.00 | TWD182.00 |
* 參考價格
- RS庫存編號:
- 688-6807
- 製造零件編號:
- IRF1324PBF
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 353A | |
| Maximum Drain Source Voltage Vds | 24V | |
| Package Type | TO-220AB | |
| Series | HEXFETPower MOSFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 353A | ||
Maximum Drain Source Voltage Vds 24V | ||
Package Type TO-220AB | ||
Series HEXFETPower MOSFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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