Vishay Single 1 Type N-Channel Power MOSFET, 2.5 A, 500 V IRF820ASPBF
- RS庫存編號:
- 180-8306
- 製造零件編號:
- IRF820ASPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD1,550.00
(不含稅)
TWD1,627.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 950 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD31.00 | TWD1,550.00 |
| 100 - 150 | TWD30.30 | TWD1,515.00 |
| 200 + | TWD29.60 | TWD1,480.00 |
* 參考價格
- RS庫存編號:
- 180-8306
- 製造零件編號:
- IRF820ASPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Length | 2.79mm | |
| Width | 10.67 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Length 2.79mm | ||
Width 10.67 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRF820AS is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having D2PAK (TO-263)and I2PAK (TO-262) package. It offers drain to source resistance (RDS.) 3ohms at 10VGS. Maximum drain current 17A.
Low gate charge Qg results in simple drive requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
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