Vishay Single 1 Type N-Channel MOSFET, 5.5 A, 400 V IRF730ASPBF
- RS庫存編號:
- 180-8303
- 製造零件編號:
- IRF730ASPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,060.00
(不含稅)
TWD2,163.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD41.20 | TWD2,060.00 |
| 100 - 150 | TWD40.30 | TWD2,015.00 |
| 200 + | TWD39.30 | TWD1,965.00 |
* 參考價格
- RS庫存編號:
- 180-8303
- 製造零件編號:
- IRF730ASPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 4.83mm | |
| Length | 9.65mm | |
| Width | 10.67 mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 400V | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 4.83mm | ||
Length 9.65mm | ||
Width 10.67 mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 400V and maximum gate-source voltage of 30V. It has a drain-source resistance of 10mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fully characterized capacitance and avalanche voltage and current
• Halogen and lead (Pb) free component
• Improved gate, avalanche and dynamic dV/dt
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
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