Vishay Single 1 Type P-Channel MOSFET, 1.8 A, 400 V, 3-Pin TO-252
- RS庫存編號:
- 180-8772
- 製造零件編號:
- IRFR9310PBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD206.00
(不含稅)
TWD216.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,280 件從 2026年6月29日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD20.60 | TWD206.00 |
| 20 + | TWD20.30 | TWD203.00 |
* 參考價格
- RS庫存編號:
- 180-8772
- 製造零件編號:
- IRFR9310PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS-compliant | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 9.65mm | ||
Standards/Approvals RoHS-compliant | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET, 400V Maximum Drain Source Voltage, 1.8A Maximum Continuous Drain Current - IRFR9310PBF
This MOSFET is a P-channel power transistor designed for high-voltage switching and control tasks in industrial electronic systems. It is intended for surface-mount or through-hole mounting and offers a single-element transistor configuration suitable for discrete power stages. The device operates across a wide temperature range and is rated for moderate continuous current, making it applicable where Compact high-voltage switching is required.
Features and Benefits:
• 400V drain-to-source capability enabling high-voltage applications
• 7Ω on-resistance for predictable conduction losses
• 1.8A continuous current supporting moderate load currents
• 50W power dissipation for substantial thermal handling
• 13nC typical gate charge for manageable switching control
• 20V maximum gate drive allowing flexible gate-drive design
• 7Ω on-resistance for predictable conduction losses
• 1.8A continuous current supporting moderate load currents
• 50W power dissipation for substantial thermal handling
• 13nC typical gate charge for manageable switching control
• 20V maximum gate drive allowing flexible gate-drive design
Applications
• Suitable for high-voltage power switching in industrial automation
• Ideal for P-channel load switching in power-supply topologies
• Used for discrete transistor stages in motor-control electronics
• Can be used for protection and isolation circuits in electrical systems
• Ideal for P-channel load switching in power-supply topologies
• Used for discrete transistor stages in motor-control electronics
• Can be used for protection and isolation circuits in electrical systems
What package styles are available for PCB mounting or prototyping?
The device is supplied in a TO-252 package and supports both surface-mount and through-hole assembly options to suit different board layouts and prototyping needs.
How does thermal performance affect installation choices?
With a maximum junction temperature of 150°C and 50W dissipation rating, adequate thermal management such as heatsinking or copper area should be included to maintain safe operating temperatures under sustained loads.
What gate-drive limits must be observed when designing control circuitry?
The gate-source voltage must not exceed 20V, so gate drivers and level-shifting circuitry should be specified to remain within this threshold.
Are there environmental or regulatory considerations for use in assemblies?
The component is RoHS-compliant, permitting its use in assemblies where restricted substance directives apply.
相關連結
- Vishay Single 1 Type P-Channel MOSFET 400 V IRFR9310PBF
- Vishay IRFU Type P-Channel MOSFET 400 V Enhancement, 3-Pin IPAK
- Vishay IRFU Type P-Channel MOSFET 400 V Enhancement, 3-Pin IPAK IRFU9310PBF
- Vishay Single Type P-Channel MOSFET 3-Pin
- Vishay Type P-Channel MOSFET 200 V, 3-Pin TO-263
- Vishay Single Type P-Channel MOSFET 3-Pin IRFU9120PBF
- Vishay Type P-Channel MOSFET 200 V, 3-Pin TO-263 IRF9610SPBF
- Vishay Single Type N-Channel Power MOSFET 400 V