Vishay Single 1 Type P-Channel MOSFET, 1.8 A, 400 V, 3-Pin TO-252 IRFR9310PBF
- RS庫存編號:
- 180-8772
- 製造零件編號:
- IRFR9310PBF
- 製造商:
- Vishay
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TWD351.00
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TWD368.60
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD35.10 | TWD351.00 |
| 20 + | TWD34.60 | TWD346.00 |
* 參考價格
- RS庫存編號:
- 180-8772
- 製造零件編號:
- IRFR9310PBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS-compliant | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 9.65mm | ||
Standards/Approvals RoHS-compliant | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET, 400V Drain Source Voltage, 50W Power Dissipation - IRFR9310PBF
This MOSFET is a P-channel transistor designed for high-voltage switching in power-electronic circuits. It is supplied in a TO-252 package and is suitable for surface-mount or through-hole assembly, offering a compact solution where a P-type device is required for high-voltage applications. The device operates across a wide temperature span and meets RoHS environmental standards.
Features and Benefits:
• 400V drain-to-source voltage for high-voltage switching capability
• 7Ω maximum Rds to limit conduction losses in low-current designs
• 13nC typical gate charge for fast gate-drive transitions
• 1.8A continuous drain current for moderate current requirements
• 50W maximum power dissipation for thermal headroom in power stages
• -55 to 150°C operating range for high-temperature deployment
• 7Ω maximum Rds to limit conduction losses in low-current designs
• 13nC typical gate charge for fast gate-drive transitions
• 1.8A continuous drain current for moderate current requirements
• 50W maximum power dissipation for thermal headroom in power stages
• -55 to 150°C operating range for high-temperature deployment
Applications
• Suitable for high-voltage polarity protection circuits
• Ideal for P-channel high-side switching in power supplies
• Used with gate drivers requiring low gate-charge devices
• Can be used for industrial control electronics operating hot
• Appropriate for mixed-assembly boards combining surface-mount and through-hole components
• Ideal for P-channel high-side switching in power supplies
• Used with gate drivers requiring low gate-charge devices
• Can be used for industrial control electronics operating hot
• Appropriate for mixed-assembly boards combining surface-mount and through-hole components
What mounting options are available for fitting onto PCBs?
The device supports both surface-mount and through-hole mounting methods to accommodate varied board assembly practices.
How does the device perform under elevated ambient temperatures?
It is rated to operate up to 150°C, allowing use in designs exposed to high thermal stress when appropriate thermal management is applied.
What are the gate-drive voltage limits to consider during design?
The maximum gate-to-source voltage is ±20V, so gate-drive circuitry must constrain swings within this range.
Is this device composed of multiple elements on a single chip?
There is a single transistor element per chip, which simplifies current-sharing considerations in parallel arrangements.
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