Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V IRF740ALPBF
- RS庫存編號:
- 180-8304
- 製造零件編號:
- IRF740ALPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,405.00
(不含稅)
TWD2,525.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 150 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD48.10 | TWD2,405.00 |
| 100 - 150 | TWD47.10 | TWD2,355.00 |
| 200 + | TWD46.00 | TWD2,300.00 |
* 參考價格
- RS庫存編號:
- 180-8304
- 製造零件編號:
- IRF740ALPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Width | 10.67 mm | |
| Length | 9.65mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Width 10.67 mm | ||
Length 9.65mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRF740AL is a N-channel power MOSFET having drain to source(Vds) voltage of 400V.The gate to source voltage(VGS) is 30V. It is having D2PAK (TO-263)and I2PAK (TO-262) package. It offers drain to source resistance (RDS.) 0.55ohms at 10VGS. Maximum drain current 10A.
Low gate charge Qg results in simple drive requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
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