Vishay Type P-Channel Power MOSFET, 110 A, 80 V, 3-Pin TO-263 SUM110P08-11L-E3
- RS庫存編號:
- 180-7977
- 製造零件編號:
- SUM110P08-11L-E3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD303.00
(不含稅)
TWD318.16
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,392 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD151.50 | TWD303.00 |
| 200 - 398 | TWD147.00 | TWD294.00 |
| 400 + | TWD145.50 | TWD291.00 |
* 參考價格
- RS庫存編號:
- 180-7977
- 製造零件編號:
- SUM110P08-11L-E3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0112Ω | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 10.414 mm | |
| Length | 15.875mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0112Ω | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 10.414 mm | ||
Length 15.875mm | ||
Automotive Standard No | ||
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 80V and maximum gate-source voltage of 20V. It has a drain-source resistance of 11.2mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• DC/DC primary switches
• Load switches
• Power management
相關連結
- Vishay Type P-Channel Power MOSFET 80 V, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-07L-E3
- Vishay SUM110P06-08L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay SUM110P06-08L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 100 V, 3-Pin TO-263 SUM90P10-19L-E3
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1