Vishay Type P-Channel MOSFET, 90 A, 100 V, 3-Pin TO-263 SUM90P10-19L-E3
- RS庫存編號:
- 180-8130
- 製造零件編號:
- SUM90P10-19L-E3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD645.00
(不含稅)
TWD677.25
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 190 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD129.00 | TWD645.00 |
| 200 - 395 | TWD126.00 | TWD630.00 |
| 400 + | TWD124.00 | TWD620.00 |
* 參考價格
- RS庫存編號:
- 180-8130
- 製造零件編號:
- SUM90P10-19L-E3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.019Ω | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.414 mm | |
| Standards/Approvals | RoHS Directive 2002/95/EC | |
| Length | 0.625in | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.019Ω | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.414 mm | ||
Standards/Approvals RoHS Directive 2002/95/EC | ||
Length 0.625in | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package, is a new-age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 19mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. It can be used in the primary side switch. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
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