onsemi NVMFS6H818N Type N-Channel MOSFET, 123 A, 80 V Enhancement, 5-Pin DFN NVMFS6H818NT1G
- RS庫存編號:
- 178-4464
- 製造零件編號:
- NVMFS6H818NT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD558.00
(不含稅)
TWD585.90
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 370 | TWD55.80 | TWD558.00 |
| 380 - 740 | TWD54.30 | TWD543.00 |
| 750 + | TWD53.50 | TWD535.00 |
* 參考價格
- RS庫存編號:
- 178-4464
- 製造零件編號:
- NVMFS6H818NT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NVMFS6H818N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NVMFS6H818N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H818NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
DC/DC converter
Load Switch
相關連結
- onsemi NVMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN NTMFS6H818NT1G
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN NVMTS1D2N08H
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6D1N08H Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN