Toshiba Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN
- RS庫存編號:
- 171-2421
- 製造零件編號:
- TK31V60W5
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD378,250.00
(不含稅)
TWD397,150.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月03日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD151.30 | TWD378,250.00 |
| 5000 - 22500 | TWD146.70 | TWD366,750.00 |
| 25000 + | TWD132.10 | TWD330,250.00 |
* 參考價格
- RS庫存編號:
- 171-2421
- 製造零件編號:
- TK31V60W5
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 109mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Length | 8mm | |
| Width | 8 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 109mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Length 8mm | ||
Width 8 mm | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
Switching Voltage Regulators
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)
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