製造零件編號

Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN

RS庫存編號:: 206-9729
製造零件編號:: TK099V65Z,LQ(S
製造商:: Toshiba

Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN

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RS庫存編號:: 206-9729
製造零件編號:: TK099V65Z,LQ(S
製造商:: Toshiba

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產品詳細資訊

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選取全部	屬性	值
	品牌	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	DFN
	Series	TK099V65Z
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	47nC
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	-1.7V
	Maximum Operating Temperature	150°C
	Height	0.5mm
	Width	8 mm
	Length	8mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type DFN
	Series TK099V65Z
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 47nC
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf -1.7V
	Maximum Operating Temperature 150°C
	Height 0.5mm
	Width 8 mm
	Length 8mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - TK099V65Z,LQ(S

The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.

Low drain-source on-resistance 0.08 ?

Storage temperature -55 to 150°C

Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN

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