製造零件編號

Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-247 TK31N60W5,S1VF(S

RS庫存編號:: 125-0565
製造零件編號:: TK31N60W5,S1VF(S
製造商:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-247 TK31N60W5,S1VF(S

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 2 件）*

TWD482.00

(不含稅)

TWD506.10

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月25日發貨

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單位	每單位	每包*
2 - 8	TWD241.00	TWD482.00
10 - 18	TWD236.00	TWD472.00
20 - 48	TWD229.50	TWD459.00
50 - 98	TWD225.50	TWD451.00
100 +	TWD220.00	TWD440.00

* 參考價格

RS庫存編號:: 125-0565
製造零件編號:: TK31N60W5,S1VF(S
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30.8A
	Maximum Drain Source Voltage Vds	600V
	Series	DTMOSIV
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	230W
	Typical Gate Charge Qg @ Vgs	105nC
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	-1.7V
	Maximum Operating Temperature	150°C
	Length	15.94mm
	Standards/Approvals	No
	Width	5.02 mm
	Height	20.95mm
	Automotive Standard	No

	選取全部
	品牌 Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30.8A
	Maximum Drain Source Voltage Vds 600V
	Series DTMOSIV
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 230W
	Typical Gate Charge Qg @ Vgs 105nC
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf -1.7V
	Maximum Operating Temperature 150°C
	Length 15.94mm
	Standards/Approvals No
	Width 5.02 mm
	Height 20.95mm
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-247 TK31N60W5,S1VF(S

訂單超過 $1,300.00 免費送貨

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