Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

RS庫存編號:: 151-3178
製造零件編號:: PMDXB600UNEZ
製造商:: Nexperia

Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

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可享批量折扣

小計（1 包，共 25 件）*

TWD190.00

(不含稅)

TWD199.50

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月31日發貨

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單位	每單位	每包*
25 - 1225	TWD7.60	TWD190.00
1250 - 2475	TWD7.50	TWD187.50
2500 +	TWD7.20	TWD180.00

* 參考價格

RS庫存編號:: 151-3178
製造零件編號:: PMDXB600UNEZ
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	600mA
	Maximum Drain Source Voltage Vds	20V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	4.03W
	Typical Gate Charge Qg @ Vgs	0.4nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	0.4mm
	Length	1.15mm
	Standards/Approvals	No
	Width	1.05 mm
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 600mA
	Maximum Drain Source Voltage Vds 20V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 4.03W
	Typical Gate Charge Qg @ Vgs 0.4nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 0.4mm
	Length 1.15mm
	Standards/Approvals No
	Width 1.05 mm
	Automotive Standard No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

訂單超過 $1,300.00 免費送貨

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