Toshiba Single N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SSM3K333R
- RS庫存編號:
- 171-2399
- 製造零件編號:
- SSM3K333R
- 製造商:
- Toshiba
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- RS庫存編號:
- 171-2399
- 製造零件編號:
- SSM3K333R
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Transistor Configuration | Single | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 6 A | |
| Maximum Drain Source Voltage (Vds) | 30 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | SOT-23 | |
| Height | 800 μm | |
| Length | 2.9 mm | |
| Maximum Drain Source Resistance (Rds) | 42 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 2 W | |
| Mount Type | Surface | |
| Width | 1.8 mm | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Transistor Configuration Single | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 6 A | ||
Maximum Drain Source Voltage (Vds) 30 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type SOT-23 | ||
Height 800 μm | ||
Length 2.9 mm | ||
Maximum Drain Source Resistance (Rds) 42 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 2 W | ||
Mount Type Surface | ||
Width 1.8 mm | ||
- COO (Country of Origin):
- TH
4.5V drive
Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 28 mΩ (max) (@VGS = 10 V)
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