Toshiba Type N-Channel MOSFET, 92 A, 40 V Enhancement, 8-Pin TSON
- RS庫存編號:
- 171-2210
- 製造零件編號:
- TPN3R704PL
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
TWD138,000.00
(不含稅)
TWD144,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD27.60 | TWD138,000.00 |
| 10000 - 15000 | TWD27.00 | TWD135,000.00 |
| 20000 + | TWD26.40 | TWD132,000.00 |
* 參考價格
- RS庫存編號:
- 171-2210
- 製造零件編號:
- TPN3R704PL
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 92A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 86W | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.1 mm | |
| Standards/Approvals | No | |
| Height | 0.85mm | |
| Length | 3.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 92A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 86W | ||
Maximum Operating Temperature 175°C | ||
Width 3.1 mm | ||
Standards/Approvals No | ||
Height 0.85mm | ||
Length 3.1mm | ||
Automotive Standard No | ||
豁免
High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 8.1 nC (typ.)
Small output charge: Qoss = 20.2 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 0.2 mA)
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