Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M
- RS庫存編號:
- 171-2385
- 製造零件編號:
- TPN14006NH,L1Q(M
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD164.00
(不含稅)
TWD172.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,790 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1240 | TWD16.40 | TWD164.00 |
| 1250 - 2490 | TWD16.10 | TWD161.00 |
| 2500 + | TWD15.70 | TWD157.00 |
* 參考價格
- RS庫存編號:
- 171-2385
- 製造零件編號:
- TPN14006NH,L1Q(M
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Width | 3.1 mm | |
| Standards/Approvals | No | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Width 3.1 mm | ||
Standards/Approvals No | ||
Height 0.85mm | ||
Automotive Standard No | ||
豁免
Switching Voltage Regulators
Motor Drivers
DC-DC Converters
High-speed switching
Small gate charge: QSW = 5.5 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
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