製造零件編號

Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

RS庫存編號:: 351-877
製造零件編號:: IGLR65R200D2XUMA1
製造商:: Infineon

Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

可享批量折扣

小計（1 包，共 5 件）*

TWD408.00

(不含稅)

TWD428.40

訂單超過 $1,300.00 免費送貨

有庫存

5,000 件準備從其他地點送貨

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單位	每單位	每包*
5 - 45	TWD81.60	TWD408.00
50 - 95	TWD77.40	TWD387.00
100 - 495	TWD71.80	TWD359.00
500 - 995	TWD66.00	TWD330.00
1000 +	TWD63.60	TWD318.00

* 參考價格

RS庫存編號:: 351-877
製造零件編號:: IGLR65R200D2XUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.2A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TSON-8
	Series	IGLR65
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.24Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	1.26nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	34W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.2A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TSON-8
	Series IGLR65
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.24Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 1.26nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 34W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLR65R200D2XUMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

訂單超過 $1,300.00 免費送貨

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