製造零件編號

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

RS庫存編號:: 351-874
製造零件編號:: IGLR65R270D2XUMA1
製造商:: Infineon

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

可享批量折扣

小計（1 包，共 5 件）*

TWD339.00

(不含稅)

TWD355.95

訂單超過 $1,300.00 免費送貨

有庫存

5,000 件準備從其他地點送貨

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單位	每單位	每包*
5 - 45	TWD67.80	TWD339.00
50 - 95	TWD64.40	TWD322.00
100 - 495	TWD59.80	TWD299.00
500 - 995	TWD55.00	TWD275.00
1000 +	TWD53.00	TWD265.00

* 參考價格

RS庫存編號:: 351-874
製造零件編號:: IGLR65R270D2XUMA1
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	650V
	Series	IGLR65
	Package Type	PG-TSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.33Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	28W
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 650V
	Series IGLR65
	Package Type PG-TSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.33Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 28W
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLR65R270D2XUMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge and low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

訂單超過 $1,300.00 免費送貨

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